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Investigation of the Reflectivity Spectrum of the a-Plane Oriented ZnO Epilayers Grown by Plasma-Assisted Molecular Beam Epitaxy from the Gaussian Distribution

Received: 25 October 2017     Accepted: 3 November 2017     Published: 18 December 2017
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Abstract

The Photoluminescence spectra at low temperature of the a-plane oriented ZnO grown on r-plane (011-2) sapphire substrates by plasma-assisted molecular beam epitaxy, showed experimentally three types of excitons A, B and C. In the reflectivity spectra, authors used a program based on the theory of the spatial resonance dispersion Hopfield model to fit the free excitons. The A and B free excitons were fitted together and the C exciton with the band gap. But these fits were not perfect in the transparency zone at low energy. This is mainly due to the fact that the A and B free excitons are closer and the C exciton is closer to the band gap but another reason is the value of the oscillator strength. In the present work, we present a method taking account the Gaussian distribution, to fit perfectly the excitons A, B and C using almost the same physical parameters than the theory of the spatial resonance dispersion Hopfield model.

Published in American Journal of Optics and Photonics (Volume 5, Issue 5)
DOI 10.11648/j.ajop.20170505.11
Page(s) 50-54
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2017. Published by Science Publishing Group

Keywords

Exciton A, B and C, Gaussian Distribution, Reflectivity Spectrum, a-Plane Oriented ZnO

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    Alioune Aidara Diouf, Bassirou Lo, Abel Sambou, Oumar Sakho, Aboubaker Chedikh Beye. (2017). Investigation of the Reflectivity Spectrum of the a-Plane Oriented ZnO Epilayers Grown by Plasma-Assisted Molecular Beam Epitaxy from the Gaussian Distribution. American Journal of Optics and Photonics, 5(5), 50-54. https://doi.org/10.11648/j.ajop.20170505.11

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    ACS Style

    Alioune Aidara Diouf; Bassirou Lo; Abel Sambou; Oumar Sakho; Aboubaker Chedikh Beye. Investigation of the Reflectivity Spectrum of the a-Plane Oriented ZnO Epilayers Grown by Plasma-Assisted Molecular Beam Epitaxy from the Gaussian Distribution. Am. J. Opt. Photonics 2017, 5(5), 50-54. doi: 10.11648/j.ajop.20170505.11

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    AMA Style

    Alioune Aidara Diouf, Bassirou Lo, Abel Sambou, Oumar Sakho, Aboubaker Chedikh Beye. Investigation of the Reflectivity Spectrum of the a-Plane Oriented ZnO Epilayers Grown by Plasma-Assisted Molecular Beam Epitaxy from the Gaussian Distribution. Am J Opt Photonics. 2017;5(5):50-54. doi: 10.11648/j.ajop.20170505.11

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  • @article{10.11648/j.ajop.20170505.11,
      author = {Alioune Aidara Diouf and Bassirou Lo and Abel Sambou and Oumar Sakho and Aboubaker Chedikh Beye},
      title = {Investigation of the Reflectivity Spectrum of the a-Plane Oriented ZnO Epilayers Grown by Plasma-Assisted Molecular Beam Epitaxy from the Gaussian Distribution},
      journal = {American Journal of Optics and Photonics},
      volume = {5},
      number = {5},
      pages = {50-54},
      doi = {10.11648/j.ajop.20170505.11},
      url = {https://doi.org/10.11648/j.ajop.20170505.11},
      eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajop.20170505.11},
      abstract = {The Photoluminescence spectra at low temperature of the a-plane oriented ZnO grown on r-plane (011-2) sapphire substrates by plasma-assisted molecular beam epitaxy, showed experimentally three types of excitons A, B and C. In the reflectivity spectra, authors used a program based on the theory of the spatial resonance dispersion Hopfield model to fit the free excitons. The A and B free excitons were fitted together and the C exciton with the band gap. But these fits were not perfect in the transparency zone at low energy. This is mainly due to the fact that the A and B free excitons are closer and the C exciton is closer to the band gap but another reason is the value of the oscillator strength. In the present work, we present a method taking account the Gaussian distribution, to fit perfectly the excitons A, B and C using almost the same physical parameters than the theory of the spatial resonance dispersion Hopfield model.},
     year = {2017}
    }
    

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    T1  - Investigation of the Reflectivity Spectrum of the a-Plane Oriented ZnO Epilayers Grown by Plasma-Assisted Molecular Beam Epitaxy from the Gaussian Distribution
    AU  - Alioune Aidara Diouf
    AU  - Bassirou Lo
    AU  - Abel Sambou
    AU  - Oumar Sakho
    AU  - Aboubaker Chedikh Beye
    Y1  - 2017/12/18
    PY  - 2017
    N1  - https://doi.org/10.11648/j.ajop.20170505.11
    DO  - 10.11648/j.ajop.20170505.11
    T2  - American Journal of Optics and Photonics
    JF  - American Journal of Optics and Photonics
    JO  - American Journal of Optics and Photonics
    SP  - 50
    EP  - 54
    PB  - Science Publishing Group
    SN  - 2330-8494
    UR  - https://doi.org/10.11648/j.ajop.20170505.11
    AB  - The Photoluminescence spectra at low temperature of the a-plane oriented ZnO grown on r-plane (011-2) sapphire substrates by plasma-assisted molecular beam epitaxy, showed experimentally three types of excitons A, B and C. In the reflectivity spectra, authors used a program based on the theory of the spatial resonance dispersion Hopfield model to fit the free excitons. The A and B free excitons were fitted together and the C exciton with the band gap. But these fits were not perfect in the transparency zone at low energy. This is mainly due to the fact that the A and B free excitons are closer and the C exciton is closer to the band gap but another reason is the value of the oscillator strength. In the present work, we present a method taking account the Gaussian distribution, to fit perfectly the excitons A, B and C using almost the same physical parameters than the theory of the spatial resonance dispersion Hopfield model.
    VL  - 5
    IS  - 5
    ER  - 

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Author Information
  • Faculty of Sciences & Techniques, Cheikh Anta Diop University, Dakar, Senegal

  • Faculty of Sciences & Techniques, Cheikh Anta Diop University, Dakar, Senegal

  • Faculty of Sciences & Techniques, Cheikh Anta Diop University, Dakar, Senegal

  • Faculty of Sciences & Techniques, Cheikh Anta Diop University, Dakar, Senegal

  • Faculty of Sciences & Techniques, Cheikh Anta Diop University, Dakar, Senegal

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