| Peer-Reviewed

Electron-Hole and Photon Recombination Processes in Quantum Well Semiconductor Lasers

Received: 16 March 2015     Accepted: 24 March 2015     Published: 19 August 2015
Views:       Downloads:
Abstract

The success obtained from semiconductor laser devices is dependent on the science of manipulating the electron-hole and the photon. While the most useful interaction in the laser is the recombination process that involves the electron and holes to produce a photon, other non-useful processes also occur and in some cases overshadow the preferred recombination process. In this review article, the physics behind radiative and non-radiative recombination processes and loss mechanisms dominant in quantum well semiconductor lasers is presented. The work concludes by suggesting possible solutions based on relevant published works

Published in American Journal of Optics and Photonics (Volume 3, Issue 5)
DOI 10.11648/j.ajop.20150305.14
Page(s) 80-84
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2015. Published by Science Publishing Group

Keywords

Semiconductors, Lasers, Recombination, Quantum-Well

References
[1] M. Nathan, W. Dumke, G. Burns, F. Dill, and G. Lasher, "- stimulated emission of radiation from GaAs p?n JUNCTIONS," vol. - 1, 1962.
[2] N. Holonyak and S. Bevacqua, "- coherent (visible) light emission from Ga(As1-xPx) junctions," vol. - 1, 1962
[3] K. O'Brien, S. J. Sweeney, A. R. Adams, B. N. Murdin, A. Salhi, Y. Rouillard, and A. Joullie, "Recombination processes in midinfrared InGaAsSb diode lasers emitting at 2.37 mu m," Applied Physics Letters, vol. 89, Jul 31 2006..
[4] Z. Yin and X. Tang, "A review of energy bandgap engineering in III–V semiconductor alloys for mid-infrared laser applications," Solid-State Electronics, vol. 51, pp. 6-15, 2007..
[5] W. W. Bewley, C. L. Felix, I. Vurgaftman, D. W. Stokes, J. R. Meyer, H. Lee, and R. U. Martinelli, "Optical-pumping injection cavity (OPIC) Mid-IR "W" lasers with high efficiency and low loss," Ieee Photonics Technology Letters, vol. 12, pp. 477-479, May 2000.
[6] R. Q. Yang, J. L. Bradshaw, J. D. Bruno, J. T. Pham, and D. E. Wortman, "Mid-infrared type-II interband cascade lasers," Ieee Journal of Quantum Electronics, vol. 38, pp. 559-568, Jun 2002.
[7] K. O'Brien, S. J. Sweeney, A. R. Adams, S. R. Jin, C. N. Ahmad, B. N. Murdin, A. Salhi, Y. Rouillard, and A. Joullie, "Carrier recombination mechanisms in mid-infrared GaInAsSb quantum well lasers," Physica Status Solidi B-Basic Solid State Physics, vol. 244, pp. 203-207, Jan 2007.
[8] W. W. B. I. Vurgaftman., C.L. Canedy, C.S. Kim, M.m. Kim, C.D. Mmerritt, J. Abell, J.R. Lindle & J.R. Mmeyer, "Rebalancing of internally generated carriers for mid-infrared interband cascade lasers with very low power consumption," Nature communication, vol. 10, 2011.
[9] T. Chen, S. Margalit, U. Koren, K. Yu, L. Chiu, A. Hasson, and A. Yariv, "- Direct measurement of the carrier leakage in an InGaAsP/InP laser," vol. - 42, 1983.
[10] G. Belenky, Kazarinov, R., Lopata, J., Luryi, S., Tanbun-Elk,. T., Garbinski, P., "Direct measurement of Carrier Out of Active Region in InGaAsP/InP Laser Heterostructures," IEEE Transaction on Electron Devices, vol. 42, p. 4, 1995.
[11] Numai, T., Fundamentals of semiconductor lasers. 2015: Springer
[12] She, C., et al., Low-threshold stimulated emission using colloidal quantum wells. Nano letters, 2014. 14(5): p. 2772-2777
Cite This Article
  • APA Style

    Barnbas Achakpa Ikyo. (2015). Electron-Hole and Photon Recombination Processes in Quantum Well Semiconductor Lasers. American Journal of Optics and Photonics, 3(5), 80-84. https://doi.org/10.11648/j.ajop.20150305.14

    Copy | Download

    ACS Style

    Barnbas Achakpa Ikyo. Electron-Hole and Photon Recombination Processes in Quantum Well Semiconductor Lasers. Am. J. Opt. Photonics 2015, 3(5), 80-84. doi: 10.11648/j.ajop.20150305.14

    Copy | Download

    AMA Style

    Barnbas Achakpa Ikyo. Electron-Hole and Photon Recombination Processes in Quantum Well Semiconductor Lasers. Am J Opt Photonics. 2015;3(5):80-84. doi: 10.11648/j.ajop.20150305.14

    Copy | Download

  • @article{10.11648/j.ajop.20150305.14,
      author = {Barnbas Achakpa Ikyo},
      title = {Electron-Hole and Photon Recombination Processes in Quantum Well Semiconductor Lasers},
      journal = {American Journal of Optics and Photonics},
      volume = {3},
      number = {5},
      pages = {80-84},
      doi = {10.11648/j.ajop.20150305.14},
      url = {https://doi.org/10.11648/j.ajop.20150305.14},
      eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajop.20150305.14},
      abstract = {The success obtained from semiconductor laser devices is dependent on the science of manipulating the electron-hole and the photon. While the most useful interaction in the laser is the recombination process that involves the electron and holes to produce a photon, other non-useful processes also occur and in some cases overshadow the preferred recombination process. In this review article, the physics behind radiative and non-radiative recombination processes and loss mechanisms dominant in quantum well semiconductor lasers is presented. The work concludes by suggesting possible solutions based on relevant published works},
     year = {2015}
    }
    

    Copy | Download

  • TY  - JOUR
    T1  - Electron-Hole and Photon Recombination Processes in Quantum Well Semiconductor Lasers
    AU  - Barnbas Achakpa Ikyo
    Y1  - 2015/08/19
    PY  - 2015
    N1  - https://doi.org/10.11648/j.ajop.20150305.14
    DO  - 10.11648/j.ajop.20150305.14
    T2  - American Journal of Optics and Photonics
    JF  - American Journal of Optics and Photonics
    JO  - American Journal of Optics and Photonics
    SP  - 80
    EP  - 84
    PB  - Science Publishing Group
    SN  - 2330-8494
    UR  - https://doi.org/10.11648/j.ajop.20150305.14
    AB  - The success obtained from semiconductor laser devices is dependent on the science of manipulating the electron-hole and the photon. While the most useful interaction in the laser is the recombination process that involves the electron and holes to produce a photon, other non-useful processes also occur and in some cases overshadow the preferred recombination process. In this review article, the physics behind radiative and non-radiative recombination processes and loss mechanisms dominant in quantum well semiconductor lasers is presented. The work concludes by suggesting possible solutions based on relevant published works
    VL  - 3
    IS  - 5
    ER  - 

    Copy | Download

Author Information
  • Dept. of Physics, Benue State University, Makurdi, Nigeria

  • Sections