We demonstrated photonic band diagrams of three-dimensional photonic crystals composed of InP and Si for four different lattice types:- face-centered cubic (FCC), inverse opal, woodpile, and diamond structures, making 12 combinations. The Si-based FCC and inverse opal lattices exhibited no photonic band gaps (PBGs). Then, the InP-based inverse opal demonstrated small, significant 1% PBGs. After that the woodpile lattices of dielectric rods in air and diamond lattices of air voids in dielectric for both InP and Si showed large complete PBGS, enabling better photon control. A point defect was introduced in the inverse opal lattice of air voids in Si and InP background. The Si lattice didn’t have a cavity mode, as it had no PBGs. The InP inverse opal lattice localized light effectively within its defect cavity using its 1% PBG, enabling it to act as a resonator and reflector. Light emission was inhibited in the surrounding photonic crystal region, as it was trapped in the defect cavity. The results obtained here are an important step towards the complete control of photons in photonic crystals.
Published in | American Journal of Optics and Photonics (Volume 13, Issue 1) |
DOI | 10.11648/j.ajop.20251301.11 |
Page(s) | 1-16 |
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This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited. |
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Copyright © The Author(s), 2025. Published by Science Publishing Group |
Photonic Band Gap (PBG), Face Centered Cubic (FCC) Lattice, Three-dimentional (3D), Photonic Crystal (PC)
The mid-gap frequency (ωm) | Band-gap width (Δω) | Gap-midgap ratio (Δω/ ωm) | Gap percentage (%) | |
---|---|---|---|---|
0.86 - 0.87 | 0.866 | 0.012 | 1.39e-02 | 1.39 |
The mid-gap frequency (ωm) | Band-gap width (Δω) | Gap-midgap ratio (Δω/ ωm) | Gap percentage (%) | |
---|---|---|---|---|
0.35 - 0.43 | 0.391 | 0.08 | 0.204 | 20.37 |
The mid-gap frequency (ωm) | Band-gap width (Δω) | Gap-midgap ratio (Δω/ ωm) | Gap percentage (%) | |
---|---|---|---|---|
0.39 - 0.46 | 0.43 | 0.07 | 0.153 | 15.34 |
The mid-gap frequency (ωm) | Band-gap width (Δω) | Gap-midgap ratio (Δω/ ωm) | Gap percentage (%) | |
---|---|---|---|---|
0.492 - 0.653 | 0.57 | 0.16 | 0.28 | 28.13 |
The mid-gap frequency (ωm) | Band-gap width (Δω) | Gap-midgap ratio (Δω/ ωm) | Gap percentage (%) | |
---|---|---|---|---|
0.56 - 0.68 | 0. 62 | 0.12 | 0.189 | 18.85 |
FCC | Face-Centered Cubic |
PBG | Photonic Band Gap |
TE | Transverse Electric |
TM | Transverse Magnetic |
3D | Three-dimensional |
PC | Photonic Crystal |
Q | Quality Factor |
PWE | Plane-wave Expansion Method |
FDTD | Finite-Difference Time Domain Method |
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APA Style
Salwa, F. A., Khandaker, J., Islam, M. M. R., Rahman, M. O., Chowdhury, M. A. M. (2025). Band Gap Engineering and Light Localization in Si and InP Based Three-dimensional Photonic Crystals. American Journal of Optics and Photonics, 13(1), 1-16. https://doi.org/10.11648/j.ajop.20251301.11
ACS Style
Salwa, F. A.; Khandaker, J.; Islam, M. M. R.; Rahman, M. O.; Chowdhury, M. A. M. Band Gap Engineering and Light Localization in Si and InP Based Three-dimensional Photonic Crystals. Am. J. Opt. Photonics 2025, 13(1), 1-16. doi: 10.11648/j.ajop.20251301.11
@article{10.11648/j.ajop.20251301.11, author = {Fairuz Aniqa Salwa and Jahirul Khandaker and Mohammad Mominur Rahman Islam and Muhammad Obaidur Rahman and Md. Abdul Mannan Chowdhury}, title = {Band Gap Engineering and Light Localization in Si and InP Based Three-dimensional Photonic Crystals }, journal = {American Journal of Optics and Photonics}, volume = {13}, number = {1}, pages = {1-16}, doi = {10.11648/j.ajop.20251301.11}, url = {https://doi.org/10.11648/j.ajop.20251301.11}, eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajop.20251301.11}, abstract = {We demonstrated photonic band diagrams of three-dimensional photonic crystals composed of InP and Si for four different lattice types:- face-centered cubic (FCC), inverse opal, woodpile, and diamond structures, making 12 combinations. The Si-based FCC and inverse opal lattices exhibited no photonic band gaps (PBGs). Then, the InP-based inverse opal demonstrated small, significant 1% PBGs. After that the woodpile lattices of dielectric rods in air and diamond lattices of air voids in dielectric for both InP and Si showed large complete PBGS, enabling better photon control. A point defect was introduced in the inverse opal lattice of air voids in Si and InP background. The Si lattice didn’t have a cavity mode, as it had no PBGs. The InP inverse opal lattice localized light effectively within its defect cavity using its 1% PBG, enabling it to act as a resonator and reflector. Light emission was inhibited in the surrounding photonic crystal region, as it was trapped in the defect cavity. The results obtained here are an important step towards the complete control of photons in photonic crystals. }, year = {2025} }
TY - JOUR T1 - Band Gap Engineering and Light Localization in Si and InP Based Three-dimensional Photonic Crystals AU - Fairuz Aniqa Salwa AU - Jahirul Khandaker AU - Mohammad Mominur Rahman Islam AU - Muhammad Obaidur Rahman AU - Md. Abdul Mannan Chowdhury Y1 - 2025/08/29 PY - 2025 N1 - https://doi.org/10.11648/j.ajop.20251301.11 DO - 10.11648/j.ajop.20251301.11 T2 - American Journal of Optics and Photonics JF - American Journal of Optics and Photonics JO - American Journal of Optics and Photonics SP - 1 EP - 16 PB - Science Publishing Group SN - 2330-8494 UR - https://doi.org/10.11648/j.ajop.20251301.11 AB - We demonstrated photonic band diagrams of three-dimensional photonic crystals composed of InP and Si for four different lattice types:- face-centered cubic (FCC), inverse opal, woodpile, and diamond structures, making 12 combinations. The Si-based FCC and inverse opal lattices exhibited no photonic band gaps (PBGs). Then, the InP-based inverse opal demonstrated small, significant 1% PBGs. After that the woodpile lattices of dielectric rods in air and diamond lattices of air voids in dielectric for both InP and Si showed large complete PBGS, enabling better photon control. A point defect was introduced in the inverse opal lattice of air voids in Si and InP background. The Si lattice didn’t have a cavity mode, as it had no PBGs. The InP inverse opal lattice localized light effectively within its defect cavity using its 1% PBG, enabling it to act as a resonator and reflector. Light emission was inhibited in the surrounding photonic crystal region, as it was trapped in the defect cavity. The results obtained here are an important step towards the complete control of photons in photonic crystals. VL - 13 IS - 1 ER -